Description
Samsung 990 EVO Plus 1TB PCIe Gen 4 NVMe M.2 2280 SSD
MZ-V9S1T0BW
The Samsung 990 EVO Plus 1 TB is a high-performance NVMe SSD that delivers top-tier speeds and efficiency. With its PCIe 4.0 ×4 (and backward/forward compatible support for PCIe 5.0 ×2) interface, this drive enables extremely fast sequential performance — up to 7,150 MB/s read and 6,300 MB/s write for the 1 TB variant.
Its compact M.2 2280 form factor makes it suitable for desktops and high-end laptops alike. Samsung’s efficient design ensures low power draw (~4.3 W during reads) and very low idle power (~60 mW), helping maintain both temperature and energy efficiency.
With a 5-year warranty and endurance rating (600 TBW for 1 TB), this SSD offers both strong performance and long-term reliability. Samsung Magician software support adds monitoring, firmware updates and SSD management.
Why It’s a Great Choice
-
High-Speed Performance: With speeds up to ~7,150 MB/s read and ~6,300 MB/s write, it’s one of the fastest client SSDs for gaming, editing, or heavy workloads.
-
Modern Interface Compatibility: The dual support for PCIe 4.0 ×4 and PCIe 5.0 ×2 ensures strong future-proofing with current and upcoming platforms.
-
Energy & Thermal Efficiency: Low power draw helps maintain cool running and contributes to reliability in both desktops and laptops.
-
Compact & Versatile: M.2 form factor makes it easy to install in small-form-factor PCs, workstations or performance laptops.
-
Reputable Brand & Support: Samsung’s strong warranty and Magician software ecosystem give you control and peace of mind.
-
Best for Mixed Use: Whether you’re gaming, editing, or general productivity, this drive offers stellar balance of speed, endurance and reliability.
Specifications
| Specification | Details |
|---|---|
| Model | MZ-V9S1T0BW |
| Capacity | 1 TB |
| Interface | PCIe 4.0 ×4 / PCIe 5.0 ×2 NVMe 2.0 |
| Form Factor | M.2 2280 (80.15 × 22.15 × 2.38 mm) |
| Sequential Read | Up to 7,150 MB/s |
| Sequential Write | Up to 6,300 MB/s |
| Random Read IOPS | Up to ~850,000 |
| Random Write IOPS | Up to ~1,350,000 |
| NAND Flash Type | Samsung V-NAND TLC |
| Power Consumption | ~4.3 W read; ~60 mW idle |
| Endurance | 600 TBW |
| Warranty | 5 Years |



Reviews
There are no reviews yet.