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July 18, 2023Samsung MZ-76E2T0BW 860 EVO 2TB SATA 6Gb/s 2.5″ SSD
R5022,00 Incl. Vat
KEY FEATURES:
– 2TB Storage Capacity
– 2.5″ Form Factor
– SATA III 6Gb/s Interface
– Up to 550MB/s Sequential Read Speed
– Up to 520MB/s Sequential Write Speed
– Random Read: Up to 98,000 IOPS
– Random Write: Up to 90,000 IOPS
– MTBF: Up to 1.5M Hours
– 5 Year Warranty or 1200 TBW
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Samsung MZ-76E2T0BW 860 EVO 2TB SATA 6Gb/s 2.5″ SSD
FEATURES
The SSD to trust
The newest edition to the world’s best-selling* SATA SSD series, the Samsung 860 EVO. Specially designed for mainstream PCs and laptops, with the latest V-NAND and a robust algorithm-based controller, this fast and reliable SSD comes in a wide range of compatible form factors and capacities.
Enhanced performance
Speeds are more consistent, even with heavy workloads and multi-tasks. The 860 EVO performs at sequential writes up to 520 MB/s* with Intelligent TurboWrite technology, and sequential reads up to 550 MB/s. The TurboWrite buffer size* is upgraded from 12 GB to 78 GB for faster file transfer.
Boosted endurance
Safely store and render large sized 4K videos and 3D data used by the latest applications, up to 8x higher TBW (Terabytes Written)* than the previous 850 EVO. The latest V-NAND technology gives you up to 2,400 TBW, or is backed by a 5-year limited warranty.*
Smart compatibility
Benefit from faster, more fluid communication with your host system. The refined ECC* algorithm and a new MJX controller generate higher speeds, and the improved queued trim enhances Linux compatibility. Our advanced engineering makes the 860 EVO more compatible with your computing system.
Multi form factors
Whatever size your computer needs, there is an 860 EVO for you. Choose among the 2.5-inch size for desktop PCs and laptops, and the SATA-based M.2 (2280) or the mSATA for ultra-slim computing devices.
SPECIFICATIONS | |
Brand | Samsung |
Series | 860 EVO |
Model | MZ-76E2T0BW |
Interface | SATA 6Gb/s (Compatible with SATA 3Gb/s & SATA 1.5Gb/s) |
Capacity | 2000GB** |
Form Factor | 2.5″ |
Performance | |
Sequential Read | Up to 550 MB/s* |
Sequential Write | Up to 520 MB/s* |
Random Read | Up to 98,000 IOPS (4KB, QD32) |
Random Write | Up to 90,000 IOPS (4KB, QD32) |
TBW | Up to 1200 Terabytes Written |
Features | |
NAND Type | Samsung V-NAND 3-bit MLC |
Controller | Samsung MJX |
Cache Memory | Samsung 2GB Low Power DDR4 SDRAM |
Garbage Collection | Auto Garbage Collection Algorithm |
Device Sleep Mode Support | Yes |
Power | |
Average Consumption | 3.0 W |
Maximum Consumption | 4.0 W (Burst Mode) |
Reliability | |
MTBF | Up to 1.5M Hours |
Environmental | |
Operating Temperatures | 0 – 70 ℃ |
Shock | 1,500 G & 0.5 ms (Half sine) |
Physical Dimensions | |
Size | 100 x 69.85 x 6.8 mm |
Weight | 60g |
Notes | * Performance may vary based on system hardware and configuration. |
**Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise. | |
Warranty Information | |
Warranty | 5 Year Limited Warranty or 1200 TBW |
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